The variation of drain current with gate-to-source voltage of a MOSFET is shown in fig.The MOSFET is (GATE-EE-2003)

The variation of drain current with gate-to-source voltage of a MOSFET is shown in fig.The MOSFET is (GATE-EE-2003)

A. an n-channel depletion mode device
B. an n-channel enhancement mode device
C. a p-channel depletion mode device
D. a p-channel enhancement mode device

ANSWER:   C

It is the transfer characteristics of a depletion mode device and it  must be p-channel, since the Vgs is positive in p-channel depletion region.

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The steady state error due to step input for a type 1 system is ........ (GATE-EE-1995)

The steady state error due to step input for a type 1 system is ........  (GATE-EE-1995)


Answer :  0

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All the resistances in the figure are 1 ohm each.The value of current 'I' is

All the resistances in the figure are 1 ohm each.The value of current 'I' is  ( GATE-EE-1992)

A. 1/15A
B. 2/15A
C. 4/15A
D. 8/15A

Answer:

Given R = 1, v = 1
After reduction , we get  Req = 1.875

I = 1 / 1.875 = 0.533 = 8/15 A

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The uncontrolled electronic switch used in power electronic converter is

The uncontrolled electronic switch used in power electronic converter is (GATE-EE-1998)

A. thyristor

B. bipolar junction transistor

C. diode

D. MOSFET

Explanatory answer:

Thyristor - semi controlled device
BJT and Mosfet -fully controlled device

Diode - uncontrolled device, since its on/off depends on external circuit.we cannot control

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The concept of an electrically short, medium and long transmission line is primarily based on the (GATE-EE-2006)

The concept of an electrically short, medium and long transmission line is primarily based on the   (GATE-EE-2006)

A. nominal voltage of the line
B. physical length of line
C. wave length of line
D. power transmitted over the line

Ans:

Physical length of line

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